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Spin On Glass, Dopants, and other Spin On Materials from Desert Silicon, LLC.
Spin-On Materials
Dopants & Glasses
Customized Spin-On Dopants and Glasses for VLSI, ULSI and Discrete Device Applications.
Spin-On
Dopants Offer
a Variety of Applications
for Device
Manufacturing |
Spin-On dopants
are primarily used to alter the electrical characteristics of
semiconductor materials. These semiconductor materials become either
"N" (negative) type conducting or "P" (positive)
type conducting. |
Spin-On
Materials Deliver
High Reliability
at Low Cost |
If you are unfamiliar with the Spin-On glass process, you will
discover that it is unsurpassed for high purity at low cost. The
Spin-On glass process begins by placing a silicon wafer on a vacuum
chuck spinner. Solution is applied to the wafer and the wafer is spun
at approximately 4,000 RPM. The result is a uniform layer of glass
formed over the wafer. |
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At present, research is currently be conducted using doped glass and
ion implantation to harden materials by knocking the dopants out of
the lattice and into the substrate material. Progress is being made in
the area of superconductor precursor materials (doped glasses or
polymers containing such elements as yttrium, barium, copper,
strontium and lanthanum). These materials are used to create high
temperature superconductor materials. Phosphorous doped glasses can be
utilized as a passivation layer over finished devices or even in
non-semiconductor work, such as jewelry and glass fabrication.
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Desert
Silicon manufactures the following spin-on diffusion
materials for a wide range of uses in semiconductor fabrication:
- Aluminum doped glass for deep-P diffusions and ceramic DIP
packaging. (Wafer Absorption)
- Antimony doped glass for buried layer and MOS applications
- Arsenic doped glass for resistor, buried layer and MOS
applications
- Boron doped glass for base, resistor and isolation diffusions.
- Gallium doped glass for P-type diffusion
- Gold doped glass for minority carrier lifetime control
- Non-doped glass as interlayer dielectric, planarization, barrier
and passivation layers
- Phosphorous doped glass for NPN base, resistor/base, barrier and
passivation layers, emitters and solar cells
Platinum doped glass for minority carrier lifetime control
Tantalum doped polymer for solar anti-reflective (A.R.) coating
and high dielectric applications
Titanium doped polymer for solar A.R. coating and high dielectric
applications
Titanium Tantalum compound polymer for solar A.R. coating and high
dielectric applications
Zinc doped glass for LED and GaAs applications
Zinc Arsenic compound spin-on glass for LED and GaAs applications
Other dopants are available and new materials are under
development, including many at or beyond the state of the art. If you
need a dopant not shown above, call us. It may be near availability or
already formulated.
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| Physical
Properties: |
The
Viscosity.s of Desert Silicon
SOM products are approximately 0.8 . 2.1 cp. The
densities are approximately 0.9 . 1.1 g/cu cm. The solutions are
passed through a 0.1 micron filter during processing making them
suitable for ULSI applications. Chemical analysis for Na, K, Cu and Fe
assure that impurities are maintained below 0.1 PPM. The solutions may
be stored at room temperature. Shelf life ranges from ninety days to
one year, depending on the dopant and concentration.
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Desert
Silicon Delivers A Combination of
Services Unmatched
in the Industry |
Incoming
materials are qualified by atomic absorption and then further
distilled to improve purity. Sodium, potassium, copper and iron must
be below 0.1 PPM. By starting with purer materials you end up with a
purer product.
Desert Silicon ensures that its
formulation meets or exceeds the specification norm for the industry.
As a result, devices suffer far less damage after diffusion. Desert
Silicon can provide a 0.1 micron particle filtration for
ULSI and VLSI devices. In addition, Spin-On films produced by Desert
Silicon have extremely low levels of carbon and chlorine.
Chlorine causes corrosion. Carbon disables a device.s electrical
characteristics. These problems are nullified at Desert
Silicon.
Desert Silicon also provides
customized materials to suit any process requirement. You never have
to adapt your process to a standard product on the shelf.
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Spin-On Material (SOM)
from Desert
Silicon
Technical Data
Features
and
Benefits of Spin-On Dopants from
Desert Silicon |
- Low temperature process
- Reduced device damage
- Ease of application
- Cost effective
- Eliminates the need for sophisticated, costly equipment
- Repeatability from week to week and batch to batch
- Consistent step coverage and planarization capability
- Superior dielectric properties for intermetal applications
- Simple to apply
- Thickness. customized to your specific applications
- 0.1 micron filtration for ULSI and VLSI device fabrications
- Quick delivery
- Unsurpassed quality over film thickness, batch uniformity,
coverage consistency and low particulate contamination
- Compatibility with PECVD process
- High purity for less than 0.1 PPM ionic contaminates, such as
sodium, potassium, copper
and iron
- Phosphorous or undoped glasses
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| Spin-On
Dopants Speed and Simplify Production |
Spin-on
dopants can be applied at room temperature without the need of costly,
sophisticated equipment. Rapid Thermal Diffusion (RTD)
prevents lateral diffusion and can be used with dense devices. In
addition, damage during diffusion is significantly reduced using
spin-on dopants.
Crystal damage
from Ion Implantation is eliminated making SOM suitable for tomorrows
devices today.
Using spin-on dopants with 3-5 or 2-6
materials allows the use of open tube diffusion. This type of
diffusion reduces production costs when compared to the sealed ampoule
process using other materials. Spin-On materials have the additional
capability to employ rapid thermal diffusion. This is a definite
advantage when working with highly dense devices.
It is also possible to mix spin-on
dopants to form compound spin-ons. Compound spin-on dopants can
compensate for any inherent weaknesses in individual materials and
create combinations that cannot be made through other methods. Mixing
spin-on dopants to form compound spin-ons allows new types of circuits
to be built. Plus, compound spin-ons make it possible for simultaneous
diffusion. Simultaneous diffusion avoids completing two, separate
diffusion steps.
Currently in research and development
are superconductor precursor materials which have the potential to be
self-passivated. Self-passivation is accomplished by using polymer or
glass as the passivation matrix material. |
| Semiconductor
Dopants, Polymers and Glass |
Aluminum-Doped
Glass
Boron-Doped Glass
Neodymium-Doped Glass
Tantalum-Doped Glass
Zinc-Doped Glass
Zinc/Phosphorous-Doped Glass
Titanium/Tantalum-Doped Polymer
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Antimony-Doped
Glass
Gold-Doped Glass
Phosphorous-Doped Glass
Titanium-Doped Polymer
Zinc/Arsenic-Doped Glass
Gallium-Doped Glass |
Arsenic-Doped
Glass
Indium-Doped Glass
Platinum-Doped Glass
BPSG |
| Superconductor
Materials |
Yttrium-Doped
Glass
Lanthanum-Doped Glass
Yttrium/Barium/Copper Oxide Polymer
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Barium-Doped
Glass
Strontium-Doped Glass |
Copper-Doped
Glass
Yttrium/Barium-Doped Glass |
| Dielectric
and Planarization |
Desert
Silicon offers a variety of thickneses for undoped or
phosphorous-doped glasses that can be used in intermetal dielectric
and planarization applications.
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QC
Testing With Today.s
Most Sophisticated
Instruments |
Desert
Silicon employs a variety of sophisticated instruments to
thoroughly test glasses before shipment to ensure that thickness is
uniform from batch to batch. |
High
Technology
Industries Have Found
Numerous Applications
For Spin-On Materials |
Passivation:
Spin-On glasses serve as a protective layer after the circuitry and
metal work is completed.
Intermetal Dielectric:
Spin-On glasses are an efficient intermetal dielectric for circuits
that have two or more levels of metal running in different directions
across the wafer. Because Spin-On glass is a low temperature process,
it is ideal for aluminum and copper applications.
Planarization:
Dense circuits usually contain steep oxide steps. By using Spin-On
glass prior to metalization, you can achieve a planarizing effect
(more filling in the lower portion and less filling of the top
portion). As a result any steps that exists will be smoothed over so
that metal going over that step will not break.
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| Product
Groups |
NDG-2000
. undoped 2,000 angstroms thick glass
NDG-5000 . undoped 5,000 angstroms thick glass
NDG-7000 . undoped 7,000 angstroms thick glass
P-240 . phosphorous 2,000 angstroms thick glass
NOS-2000
. undoped 2,000 angstroms thick Siloxane polymer |
Spin-On
Material Provides High Performance
Across the Board |
The following
features and benefits outline how Spin-On glass enhances production
efficiency and product performance.
- Because Spin-On glass is a low
temperature process, it gives manufacturers greater flexibility,
especially when there is metal on the wafer.
- Spin-On glass is compatible with
plasma deposited films. Together, these two materials provide
engineering solutions for planarization, step-coverage and
intermetal dielectric applications.
- The viscosity of Spin-On glass is
approximately 1 centipoise (Similar
to alcohol).
- Spin-On glass is typically dried in
an oven to drive off solvents after the spinning operation.
- The refractive index of Spin-On
glass is approximately 1.45. When densified at
temperatures of 350ºC . 450ºC it becomes as dense as CVD or
plasma-enhanced CVD oxide and at 800º - 1000ºC it becomes as
dense as thermal oxide.
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